MRF8S18120HR3

Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 18.2 18.6 18.7 hD (%) 49.8 51.4 53.9 MRF8S18120HR3 MRF8S18120HSR3 1805 - 1880 MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) Typical Pout @ 1 dB Compression Point ] 120 Watts CW Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 46 Watts Avg. Gps (dB) 17.9 18.2 18.3 hD (%) 41.0 41.9 43.2 SR1 @ 400 kHz (dBc) - 64 - 63 - 61 SR2 @ 600 kHz (dBc) - 76 - 76 - 76 EVM (% rms) 1.6 1.7 2.0 CASE 465- 06, STYLE 1 NI - 780 MRF8S18120HR3 Frequency 1805 MHz 1840 MHz 1880 MHz CASE 465A - 06, STYLE 1 NI - 780S MRF8S18120HSR3 Features Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate - Source Voltage Range for Improved Class C Operation Optimized for Doherty Applications www.DataSheet4U.com RoHS Compliant In Ta...