STF26NM60N-H

STF26NM60N-H N-channel 600 V, 0.135 Ω , 20 A MDmesh™ II Power MOSFET in TO-220FP Features Type STF26NM60N-H ■ ■ ■ VDSS 600 V RDS(on) max < 0.165 Ω ID 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 2 Application ■ TO-220FP Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. www.DataSheet4U.com Figure 1. Internal schematic diagram $ ' 3 3# Table 1. Device summary Order codes Marking 26NM60N Package TO-220FP Packaging Tube STF26NM60N-H(1) 1. The device meets ECOPACK® standards, an environmentally-friendly grade of products commonly referred to as “halogen-free” . See Section 4: Package mechanical data. January 2010 Doc ID 16964 Rev 1 1/12 www.st.com 12 Contents STF26NM60N-H Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . ....