2N5551HR

2N5551HR Datasheet Rad-Hard 160 V, 0.5 A NPN bipolar transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10450 Product status link 2N5551HR Features Vceo IC(max.) 160 V 0.5 A Hermetic packages ESCC and JANS qualified Up to 100 krad(Si) low dose rate HFE at 5 V, 10 mA > 80 Tj(max.) 200 °C Description This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). All part numbers are guaranteed up to 100 krad with low dose rate at 0.1 rad/s as per ESCC 22900. Qualified as per ESCC 5201/019 and MIL-PRF-19500/767 specifications and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror circuits. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Product summary Device JANSR2N5551UBx JANS2N5551UBx 2N5551RUBx 2N5551UBx SOC5551RHRx SOC5551HRx Qualification system JANSR JANS ESCC Flight ESCC Flight ESCC Flight ESCC Flight Agency specification MIL-PRF-19500/767 MIL-PRF-19500/767 5201/019 5201/019 5201/019 5201/019 Note: See Table 8 for ordering information. Package UB UB UB UB LCC-3 LCC-3 Radiation level 100 krad - 100 krad - 100 krad - DS6657 - Rev 15 - January 2023...