SKKQ31

VRSM V 700 900 1300 1500 1700 VRRM VDRM V 600 800 1200 1400 1600 (dv/dt)cr IRMS (maximum values for continuous operation) (Tcase = 85 °C) V/µs 24 A1); 30 A2) 24 A1); 45 A2) 500 500 500 500 500 – SKKQ 31/08 SKKQ 31/12 SKKQ 31/14 SKKQ 31/16 SKKQ 45/06 SKKQ 45/08 SKKQ 45/12 SKKQ 45/14 SKKQ 45/16 SEMIPACK® 0 Twin Thyristor Modules for a.c. controllers SKKQ 31 SKKQ 45 Symbol Conditions IRMS ITRMS ITSM i t tgd tgr (di/dt)cr tq IH IL VT VT(TO) rT IDD; IRD VGT IGT VGD IGD Rthjc 2 SKKQ 31 30 A2) 21 A 320 A 280 A 510 A2s 390 A2s 1 µs 1 µs SKKQ 45 45 A2) 32 A 470 A 400 A 1100 A2s 800 A2s W1C; sin. 180; Tcase = 85 °C sin. 180; Tcase = 85 °C Tvj = 25 °C; 10 ms Tvj = 125 °C; 10 ms Tvj = 25 °C; 8,3 ... 10 ms Tvj = 125 °C; 8,3 ... 10 ms Tvj = 25 °C; IG = 1 A; diG/dt = 1 A/µs VD = 0,67 . VDRM Tvj = 125 °C Tvj = 125 °C Tvj = 25 °C; typ./max. Tvj = 25 °C; RG = 33 Ω; typ./max. Tvj = 25 °C; IT = 75 A Tvj = 125 °C Tvj = 125 °C Tvj = 125 °C; VDD = VDRM; VRD = VRRM Tvj = 25 °C; d. c. Tvj = 25 °C; d. c. Tvj = 125 °C; d. c. Tvj = 125 °C; d. c. cont.  sin. 180  per thyristor/per module 100 A/µs typ. 80 µs 100/200 mA 250/400 mA max. 2,45 V 1,1 V 20 mΩ max. 10 mA max. 1,8 V 0,9 V 12 mΩ max. 10 mA SKKQ 3V 150 mA 0,25 V 5 mA 1,6/0,8 °C/W 1,2/0,6 °C/W 1,7/0,9 °C/W 1,3/0,6 °C/W 0,2/0,1 °C/W – 40 ... +125 °C – 40 ... +125 °C 3600 V∼ /3000 V∼ 1,5 Nm/13 lb. in. ± 15 %3) 5 . 9,81 m/s2 50 g A 41 Features Heat transfer through aluminium oxide ceramic isolated metal baseplate Hard soldered joints ...