N-Channel MOSFET
MAGNA
TEC
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640)
BUZ907P BUZ908P
MECHANICAL ...
Description
MAGNA
TEC
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640)
BUZ907P BUZ908P
MECHANICAL DATA Dimensions in mm
P–CHANNEL POWER MOSFET
POWER MOSFETS FOR AUDIO APPLICATIONS
3.55 (0.140) 3.81 (0.150)
20.80 (0.819) 21.46 (0.845)
6.15 (0.242) BSC
4.50 (0.177) Max.
1
2
3
1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123)
FEATURES
HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING ENHANCEMENT MODE INTEGRAL PROTECTION DIODES COMPLIMENTARY N–CHANNEL BUZ902P & BUZ903P
0.40 (0.016) 0.79 (0.031)
19.81 (0.780) 20.32 (0.800)
1.01 (0.040) 1.40 (0.055)
2.21 (0.087) 2.59 (0.102)
5.25 ( 0.215) BSC
TO-247
Pin 1 – Gate
www.DataSheet4U.com
Pin 2 – Source Case– Source
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ907P -220V ±14V -8A -8A 125W –55 to 150°C 150°C 1°C/W BUZ908P -250V
Magnatec.
Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
MAGNA
TEC
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)* RDS(on)*
BUZ907P BUZ908P
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Test Conditions
BUZ907P BUZ908P IG = ±100µA ID = -100mA ID = -8A ID = -8A VDS = -220V IDSX Drain – Source C...
Similar Datasheet