SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra...
SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance
P-TO220-3-31
1 2 3
VDS @ Tjmax RDS(on) ID
PG-TO220-3-31 PG-TO262-3
650 0.38 11
PG-TO220
V Ω A
PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type SPP11N60C3 SPI11N60C3 SPA11N60C3
Package PG-TO220-3 PG-TO262-3
Ordering Code Q67040-S4395 Q67042-S4403
Marking 11N60C3 11N60C3 11N60C3
PG-TO220-3-31 SP000216312
Maximum Ratings Parameter
www.DataSheet4U.com
Symbol SPP_I ID 11 7 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt
Page 1
Value SPA
Unit A 11 1) 71) 33 340 0.6 11 ±20 ±30 33 W °C V/ns A V A mJ
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=5.5A, VDD=50V
33 340 0.6 11 ±20 ±30 125 15
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7)
Rev. 2.6
-55...+150
2005-09-21
SPP11N60C3 SPI11N60C3, SPA11N60C3
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junctio...