BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
Rev. 01 — 15 December 2009 Obj...
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty
transistor
Rev. 01 — 15 December 2009 Objective data sheet
1. Product profile
1.1 General description
The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB
transistor.
Table 1. Typical performance RF performance at Th = 25 °C. Mode of operation W-CDMA
[1] [2]
[1][2]
f (MHz) 2110 to 2170
VDS (V) 28
PL(AV) (W) 8
Gp (dB) 13.3
ηD (%) 38
ACPR (dBc) −30
PL(3dB) (W) 52
Test signal: 2-carrier W-CDMA; test model 1; 64 DPCH; PAR = 8.3 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. IDq = 170 mA (main); VGS(amp)peak = 0 V.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
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1.2 Features
Typical W-CDMA performance at frequencies from 2110 MHz to 2170 MHz: Average output power = 8 W Power gain = 13.3 dB Efficiency = 38 % Fully optimized integrated Doherty concept: inte...
