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SUL32-AL

Formosa MS

Low VF Chip Schottky Barrier Diodes

Low VF Chip Schottky Barrier Diodes SUL32-AL Silicon epitaxial planer type Formosa MS SMA-L 0.205(5.2) 0.189(4.8) 0.01...


Formosa MS

SUL32-AL

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Description
Low VF Chip Schottky Barrier Diodes SUL32-AL Silicon epitaxial planer type Formosa MS SMA-L 0.205(5.2) 0.189(4.8) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.110(2.8) 0.094(2.4) 0.181(4.6) 0.165(4.2) 0.075(1.9) 0.067(1.7) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT T A =25 o C unless otherwise noted) PARAMETER Forward rectified current www.DataSheet4U.com Forward surge current See Fig.2 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R = V RRM T A = 25 o C CONDITIONS Symbol IO I FSM MIN. TYP. MAX. 3.0 30 1.5 20 R q JA CJ T STG -55 50 130 +150 o UNIT A A mA mA C / w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature V R = V RRM T A = 100 o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE L32 V RRM *1 V RMS *2 VR *3 VF *4 Operating temperature (o C) -55 to +125 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage (V) SUL32-...




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