Low VF Chip Schottky Barrier Diodes
SUL32-AL
Silicon epitaxial planer type
Formosa MS
SMA-L
0.205(5.2) 0.189(4.8) 0.01...
Low VF Chip
Schottky Barrier Diodes
SUL32-AL
Silicon epitaxial planer type
Formosa MS
SMA-L
0.205(5.2) 0.189(4.8) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.110(2.8) 0.094(2.4)
0.181(4.6) 0.165(4.2)
0.075(1.9) 0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T A =25 o C unless otherwise noted)
PARAMETER Forward rectified current www.DataSheet4U.com Forward surge current See Fig.2 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R = V RRM T A = 25 o C CONDITIONS Symbol IO I FSM MIN. TYP. MAX. 3.0 30 1.5 20 R q JA CJ T STG -55 50 130 +150
o
UNIT A A mA mA C / w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
V R = V RRM T A = 100 o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR
C
SYMBOLS
MARKING CODE L32
V RRM
*1
V RMS
*2
VR
*3
VF
*4
Operating temperature (o C) -55 to +125
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage
(V) SUL32-...