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HGTG12N60C3D

Harris Corporation
Part Number HGTG12N60C3D
Manufacturer Harris Corporation
Description UFS Series N-Channel IGBT
Published Jan 7, 2010
Detailed Description S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package ...
Datasheet PDF File HGTG12N60C3D PDF File

HGTG12N60C3D
HGTG12N60C3D

Overview
S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package JEDEC STYLE TO-247 E C G January 1997 Features • • • • • 24A, 600V at TC = 25 C Typical Fall Time .
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210ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode o Description The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the d...


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