T1L2003028-SP

T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across the entire band when operated in the TriQuint wide-band test fixture. The T1L2003028-SP can also be used in narrow band applications and is rated at 45Watts P1dB at 2GHz. Figure 1. Available Packages Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym R_ JC Value 1.3 Unit °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Total Dissipation at TC = 25 °C: T1L2003028-SP Derate Above 25 °C: T1L2003028-SP Operating Junction Temperature Storage Temperature Range — TJ TSTG 0.77 200 –65, +150 W/°C °C °C PD 135 W Sym VDSS VGS ID Value 65 –0.5, +15 4.25 Unit Vdc Vdc Adc * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. www.DataSheet4U.com Table 3. ESD Rating* T1L2003028-SP HBM MM Minimum (V) 500 50 1500 Class 1B A 4 Features — Exceptional ...