FLM1011-12F

FLM1011-12F X, Ku-Band Internally Matched FET FEATURES High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1011-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 57.6 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with gate resistance of 50Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item www.DataSheet4U.com Saturated Drain Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 3600mA VDS = 5V, IDS = 300mA IGS = -340µA VDS = 10V f = 10.7 ~ 11.7 GHz IDS = 0.6 IDSS(Typ.) ZS = ZL = 50Ω f = 11.7GHz, ∆f = 10MHz 2-Tone Test Pout = 29.5 dBm S.C.L. Channel to Case 10V x Idsr x Rth Min....