K4M51323LC-SN

K4M51323LC - S(D)N/G/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES VDD/VDDQ = 2.5V/2.5V LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). EMRS cycle with address key programs. All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation. Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) DQM for masking. Auto refresh. 64ms refresh period (8K cycle). Commercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 90Balls FBGA ( -SXXX -Pb, -DXXX -Pb Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M51323LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4M51323LC-S(D)N/G/L/F75 K4M51323LC-S(D)N/G/L/F7L *1 Max Freq. 133MHz(CL=3), 111MHz(CL=2) 133MHz(CL=3), 83MHz...