MA27D30

Schottky Barrier Diodes (SBD) MA27D30 Silicon epitaxial planar type Unit: mm For super high speed switching 0.27+0.05 –0.02 0.12+0.05 –0.02 ■ Features Small reverse current: IR < 2 µA (at VR = 30 V) Optimum for high frequency rectification because of its short reverse recovery time trr . 1 1.00±0.05 1.40±0.05 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current * 0.60±0.05 5° VR VRRM IF(AV) IFM IFSM Tj Tstg 30 30 100 200 1 125 −55 to +125 V 0 to 0.01 V mA mA A °C °C 1: Anode 2: Cathode SSSMini2-F2 Package Junction temperature Storage temperature Marking Symbol: 8N Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Forward voltage Symbol VF1 VF2 Reverse current www.DataSheet4U.com IR1 IR2 Terminal capacitance Reverse recovery time * Conditions IF = 10 mA IF = 100 mA VR = 10 V VR = 30 V VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω Min Typ 0.38 0.51 Max 0.44 0.58 0.3 2 0.15 max. 0.52±0.03 Symbol Rating Unit 0.20±0.05 5° 0.20±0.05 Unit V V µA µA pF ns Ct trr 9 1 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakag...