FDP3205

FDP3205 N-Channel PowerTrench® MOSFET May 2008 FDP3205 Features N-Channel PowerTrench® MOSFET 55V, 100A, 7.5mΩ Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A High performance trench technology for extermly low RDS(on) High power and current handing capability RoHS compliant D G D S TO-220 FDP Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted www.DataSheet4U.com Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed (Note 2) (Note 1) Ratings 55 ±20 100 390 365 150 1.0 -55 to +175 Units V V A A mJ W W/oC oC Operating and Storage Temperature Range Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 1.0 62.5 Units oC/W ©2008 Fairchild Semiconductor Corporation FDP3205 Rev. A 1 www.fairchildsemi.com FDP3205 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP3205 Device FDP3205 Package TO-220 Reel Size Tape Width Quantity 50units Electrical Characteristics Symbol Parameter Test Conditi...