SI5468DC

Si5468DC Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.028 at VGS = 10 V 0.034 at VGS = 4.5 V ID (A)a 6 6 Qg (Typ.) 3.8 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested APPLICATIONS 1206-8 ChipFET® 1 D D D D S D D G System Power - Notebook - Netbook Load Switch Low Current DC/DC Marking Code AK XXX Lot Traceability and Date Code Part # Code G D Bottom View S N-Channel MOSFET Ordering Information: Si5468DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit 30 ± 20 6a 6a 6a,b, c 5.5a,b, c 30 4.8 1.9b, c 5.7 3.6 2.3b, c 1.5b, c - 55 to 150 260 A Unit V Continuous Drain Current (TJ = 150 °C) www.DataSheet4U.com Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t≤5s 45 55 Maximum Junction-to-Ambientb, f °C/W 18 22 Maximum Junction-to-Foot (Drain) Steady State RthJF Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The 1206-8 ...