SI5463EDC

Si5463EDC Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.062 @ VGS = --4.5 V --20 20 0.068@ VGS = --3.6 V 0.085 @ VGS = --2.5 V 0.120 @ VGS = --1.8 V ID (A) --5.1 --4.9 --4.4 --3.7 S 1206-8 ChipFETt 1 D D D D S D D G G 5.4 kΩ Marking Code LB XX Lot Traceability and Date Code D P-Channel MOSFET Bottom View Part # Code Ordering Information: Si5463EDC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TA = 25_C TA = 85_C ID IDM IS TA = 25_C TA = 85_C PD TJ, Tstg 5 secs Steady State --20 12 Unit V www.DataSheet4U.com Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d --5.1 --3.7 --15 --1.9 2.3 1.2 --55 to 150 260 --3.8 --2.7 --1.0 1.25 0.65 W _C A THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 84 20 Maximum 55 100 25 Unit _C/W C/ Notes a. Surface Mounted on 1” x 1” FR4 Board. b. When using HBM. The MM rating is 300 V c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot...