T1P3002028-SP 20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Introduction
The T1P3002028-SP is a...
T1P3002028-SP 20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power
Transistor
Introduction
The T1P3002028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power
transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 20watts across the entire band when operated in the TriQuint wide-band test fixture. The T1P3002028-SP can also be used in narrow band applications and is rated at 26Watts P1dB at 2GHz. Figure 1. Available Packages — Narrow Band up to 2GHz — 12dB gain — 58% efficiency — 26Watt P1dB Table 1. Maximum Ratings Sym V+ Vl+ PD TCH Parameter Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Power Dissipation Operating Channel Temperature Value 28 V –5V to 0V 5.6A 70 mA See note 3 150 C
o
Notes 2/ 2/ 2/ 3/ 4/
| lG | Gate Supply Current
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1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 °C – TBASE °C) / 8.3 (°C/W) 4/ Junction operating temperature will directly affect the device median time to failure(TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. Table 2. Thermal Information Parameter Test Conditions TCH (°C) 145 θJC (°C/W) 8.3 TM (HRS) 1.6E+6
Features
— Pulse...
