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SG50N06D2S

Sirectifier Semiconductors

(SG50N06D2S / SG50N06D3S) Discrete IGBTs

SG50N06D2S, SG50N06D3S Discrete IGBTs Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter...


Sirectifier Semiconductors

SG50N06D2S

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SG50N06D2S, SG50N06D3S Discrete IGBTs Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 SG50N06D2S SG50N06D3S V W Symbol o o Test Conditions Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM=100 @ 0.8VCES 250 600 60 600 150 300 -40…+150 150 -40…+150 1.5/13 1.5/13 30 o Unit V V A A W V A A W o C VCES TJ=25 C to 150 C VCGR TJ=25oC to 150oC; RGE=1M VGES Continuous VGEM Transient IC25 TC=25oC IC90 TC=90oC ICM TC=25oC; 1 ms SSOA VGE=15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load; L=30uH PC TC=25oC VRRM IFAVM TC=70oC; rectangular; d=50% IFRM tp 10ms; pulse width limited by TJ PD TC=25oC Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s www.DataSheet4U.com TJ TJM Tstg Md Mounting torque Terminal connection torque(M4) Weight CASE DIODE IGBT A Nm/Ib.in. g (TJ=25 C, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.8VCE...




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