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HAF2026RJ

Part Number	HAF2026RJ
Manufacturer	Renesas Technology
Description	Silicon N Channel Power MOSFET Power Switching
Published	Nov 26, 2009
Detailed Description	HAF2026RJ Silicon N Channel Power MOS FET Power Switching REJ03G1255-0200 Rev.2.00 Jun 02, 2006 Description This FET ha...
Datasheet	HAF2026RJ PDF File

Overview

HAF2026RJ Silicon N Channel Power MOS FET Power Switching REJ03G1255-0200 Rev.
2.
00 Jun 02, 2006 Description This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
.
Features • • • • • Logic level operation (5 to 6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit ...

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HAF2026RJ Silicon N Channel Power MOSFET Power Switching - Renesas Technology

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