Document
STD3NB50
N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH™ MOSFET
PRELIMINARY DATA TYPE STD3NB50
s s s s s
V DSS 500 V
R DS(on) < 2.8 Ω
ID 3A
TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2 1
3 1
DPAK TO-252
(Suffix "T4")
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
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IPAK TO-251 (Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM ( • ) P tot dv/dt( 1 ) T stg Tj May 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 500 500 ± 30 3 1.9 12 50 0.4 4.5 -65 to 150 150
(1) ISD ≤3A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ o C V/ns
o o
C C 1/6
(•) Pulse width limited by safe operating area
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STD3NB50
THERMAL DATA
R thj-case
Rthj-amb
R thc-sink Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
2.5 100 1.5 275
C/W oC/W o C/W o C
o
AVALANCHE CHARACTERISTICS
Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 50 V) Max Value 3 40 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VGS = 0 Min. 500 1 50 ± 100 Typ. Max. Unit V µA µA nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = ± 30 V
T c = 125 C
o
ON (∗)
Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 10V Test Conditions ID = 250 µ A I D =1.9 A 3.8 Min. 3 Typ. 4 2.5 Max. 5 2.8 Unit V Ω A
ID(on) On State Drain Current V DS > I D(on) x R DS(on)max www.DataSheet4U.com V GS = 10 V
DYNAMIC
Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Outp.