K3114

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A) Gate voltage rating: ±30 V Avalanche capability ratings Isolated TO-220 package 5 (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 ±30 ±4.0 ±16 30 2.0 150 –55 to +150 4.0 10.7 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) www.DataSheet4U.com Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Note2 IAS EAS Single Avalanche Energy Note2 Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and addit...