FLK017XP
GaAs FET & HEMT Chips FEATURES
High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability
Source Gate
Drain
DESCRIPTION
The FLK017XP chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and effi...
