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Power Transistors
2SD2222
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1470
φ 3.3±0.2 5.0±0.3 3.0
Unit: mm
20.0±0.5
s Features
q q q
6.0
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
(TC=25˚C)
Ratings 160 160 5 15 8 150 3.5 150 –55 to +150 Unit V V V A
2.7±0.3
0.6±0.2 5.45±0.3 10.9±0.5
1
2
3
A W ˚C ˚C
1:Base 2:Collector 3:Emitter TOP–3L Package
Internal Connection
C B
E
s Electrical Characteristics
www.DataSheet4U.com Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 160V, IE = 0 VCE = 160V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 7A IC = 7A, IB = 7mA IC = 7A, IB = 7mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 7A, IB1 = 7mA, IB2 = –7mA, VCC = 50V 20 2 6 1.2 160 10000 3500 20000 3 3 V V MHz µs µs µs min typ max 100 100 100 Unit µA µA µA V
FE2
Rank classification
Q P
Rank hFE2
3500 to 10000 7000 to 20000
2.0
1.5
Optimum for 120W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat)
26.0±0.5
10.0
2.0
4.0
3.0
1
Power Transistors
PC — Ta
200 10 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) TC=25˚C 9 IB=1.0mA
2SD2222
IC — VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=1000 30 10 3 1 0.3 0.1 0.03 0.01 0.1 TC=–25˚C 25˚C 125˚C
VCE(sat) — IC
Collector power dissipation PC (W)
180 160 140 120 100 80 60 40 20 (2) (3) 0 0 20 (1)
Collector current IC (A)
8 7
0.9mA 0.8mA
6 0.7mA 5 4 3 2 1 0.3mA 0 0.6mA
0.5mA 0.4mA
40
60
80 100 120 140 160
0
2
4
6
8
10
12
14
16
0.3
1
3
10
30
100
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) — IC
100 105
hFE — IC
104
Cob — VCB
Collector output capacitance Cob (pF)
VCE=5V IE=0 f=1MHz TC=25˚C 103
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=1000 30 10 3 1 0.3 0.1 0.03 0.01 0.1
Forward current transfer ratio hFE
104
TC=–25˚C 25˚C 125˚C
TC=125˚C 103
–25˚C
102
25˚C 102
10
0.3
1
3
10
30
100
10 0.03
0.1
0.3
1
3
10
30
1 0.1
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
www.DataSheet4U.com
ton, tstg, tf — IC
100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (–IB1=IB2) VCC=50V TC=25˚C tstg 3 ton 1 tf 0.3 0.1 0.03 0.01 0 2 4 6 8 10 12
Area of safe operation (ASO.