K2725

2SK2725 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline REJ03G1023-0400 (Previous: ADE-208-452B) Rev.4.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.4.00 Sep 07, 2005 page 1 of 7 2SK2725 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR IAP*3 EAR*3 Pch*2 Tch Tstg Item Symbol Min Drain to source breakdown voltage V(BR)DSS 500 Gate to source breakdown voltage V(BR)GSS ±30 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 2.5 Static drain to source on state resistance RDS(on) — Forward transfer admittance |yfs| 2.5 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Body to drain diode forward voltage VDF — Body ...