SHXXC1130

Capsule Type Rectifier Diode SHXXC1130 Symbol Characteristics Conditions TJ(0C) Value Unit BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current 160 160 200-1800 30 V mA V = VRRM CONDUCTING PARAMETERS IF(AV) IRMS IFSM It 2 Average on-state current RMS on-state current Non repetitive peak surge onstate current Permissible surge energy Peak on-state voltage drop Typical forward conduction Threshold voltage Typical forward slope resistance MECHANICAL PARAMETERS 180 sine, 50H Z, TC = 650C 1130 1775 A A A kA2S V V mΩ Sine wave, 10mS without reverse voltage On-state current = 3000A 11000 160 605 160 160 160 1.83 0.78 0.35 VFM V0 r0 www.DataSheet4U.com THERMAL & R TH (J-C) RTH (C-HK) TJ TSTG F W Thermal impedance, 1800 conduction, Sine Thermal impedance Maximum Permissible junction temperature Storage temperature range Mounting Torque Weight Junction to case Case to heatsink 0.045 0.015 160 -40 – 160 6.5 90 0 C/W C/W 0 0 C C 0 KN gms HIND RECTIFIERS LTD 1 of 5 Capsule Type Rectifier Diode SHXXC1130 All dimensions in mm On State Power Loss 2500 www.DataSheet4U.com 2000 120 1800 600 DC Pt(av) - W 1500 1000 500 0 0 200 400 600 800 1000 1200 1400 1600 1800 It(av) - A HIND RECTIFIERS LTD 2 of 5 Capsule Type Rectifier Diode SHXXC1130 Maximum Permissible Case Temp 180 160 140 Tcase (0C) 120 100 80 60 40 20 0 0 10 0 20 0 30 0 40 0 50 0 60 0 70 0 80 0 90 0 10 00 11 00 12 00 13 00 14 00 15 00 16 00 17 00 18...