Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4145
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 5300 pF TYP.
ORDERING INFORMATION
PART NUMBER 2SK4145-S19-AY
Note
LEAD PLATING Pure Sn (Tin)
PACKING Tube 50 p/tube
PACKAGE TO-220 typ. 1.9 g
Note Pb-free (This product does not contain Pb in the external electrode).
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C)
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Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
60 ±20 ±84 ±215 84 1.5 150 −55 to +150 32 102
V V A A W W °C °C A mJ
Drain Current (pulse)
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.49 83.3 °C/W °C/W
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Document No. D18760EJ2V0DS00 (2nd edition) Date Published June 2007 NS Printed in Japan
2007
The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
2SK4145
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD
TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 30 A VGS = 10 V, ID = 42 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 30 V, ID = 42 A, VGS = 10 V, RG = 0 Ω
MIN.
TYP.
MAX. 10 ±100
UNIT
μA
nA V S
2.0 16
3.0 31 7 5300 540 330 25 17 66 9
4.0
Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
10
mΩ pF pF pF ns ns ns ns nC nC nC
VDD = 48 V, VGS = 10 V, ID = 84 A IF = 84 A, VGS = 0 V IF = 84 A, VGS = 0 V, di/dt = 100 A/μs
90 21 30 1.0 43 62 1.5
VF(S-D) trr Qrr
V ns nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
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PG. VGS = 20 → 0 V
50 Ω
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 τ τ = 1 μs Duty Cycle ≤ 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50 Ω
RL VDD
2
Data Sheet D18760EJ2V0DS
2SK4145
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120 100
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
100 80 60 40 20 0 0 25 50 75 100 125 150 175
PT - Total Power Dissipation - W
80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
1000
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
100
d it e Lim V ) n) (o i0 S 1 RD S = G ID(DC) (V
ID(pulse)
1i
1i 0
DC
PW
=1
i
m
00
i
s
μs
m
i
s
10
w Po D er is si t io pa
1
TC = 25°C Single Pulse
n d it e m Li
0.1 0.1 www.DataSheet4U.com 1 10 100
VDS - Drain to Source Voltage - V
1000
rth(t) - Transient Thermal Resistance - °C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/Wi
10 Rth(ch-C) = 1.49°C/Wi 1 Single Pulse 0.1
100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s
Data Sheet D18760EJ2V0DS
3
2SK4145
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
250 200
ID - Drain Current - A
1000 100 10 1 0.1 0.01 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6
VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V
ID - Drain Current - A
150 100 50 0
TA = −55°C 25°C 75°C 150°C
VGS = 10 V Pulsed
VDS = 10 V Pulsed
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100 TA = −55°C 25°C 75°C 150°C 10
4 3.5 3 2.5 2 1.5 1 0.5 0 -75 -25 25 75 125 175
Tch - Channel Temperature - °C
VDS = 10 V ID = 1 mA
VDS = 10 V Pulsed 1 0.1 1 10 100
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