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K4145 Dataheets PDF



Part Number K4145
Manufacturers NEC
Logo NEC
Description 2SK4145
Datasheet K4145 DatasheetK4145 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 5300 pF TYP. ORDERING INFORMATION PART NUMBER 2SK4145-S19-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube PACKAGE TO-220 typ. 1.9 g Note Pb-free (This product does not conta.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 5300 pF TYP. ORDERING INFORMATION PART NUMBER 2SK4145-S19-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube PACKAGE TO-220 typ. 1.9 g Note Pb-free (This product does not contain Pb in the external electrode). ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) www.DataSheet4U.com Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 ±20 ±84 ±215 84 1.5 150 −55 to +150 32 102 V V A A W W °C °C A mJ Drain Current (pulse) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.49 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18760EJ2V0DS00 (2nd edition) Date Published June 2007 NS Printed in Japan 2007 The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. 2SK4145 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 30 A VGS = 10 V, ID = 42 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 30 V, ID = 42 A, VGS = 10 V, RG = 0 Ω MIN. TYP. MAX. 10 ±100 UNIT μA nA V S 2.0 16 3.0 31 7 5300 540 330 25 17 66 9 4.0 Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note 10 mΩ pF pF pF ns ns ns ns nC nC nC VDD = 48 V, VGS = 10 V, ID = 84 A IF = 84 A, VGS = 0 V IF = 84 A, VGS = 0 V, di/dt = 100 A/μs 90 21 30 1.0 43 62 1.5 VF(S-D) trr Qrr V ns nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RL VDD VGS VGS Wave Form www.DataSheet4U.com PG. VGS = 20 → 0 V 50 Ω 0 10% VGS 90% VDS 90% 90% 10% 10% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 μs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D18760EJ2V0DS 2SK4145 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 PT - Total Power Dissipation - W 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C 1000 FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 100 d it e Lim V ) n) (o i0 S 1 RD S = G ID(DC) (V ID(pulse) 1i 1i 0 DC PW =1 i m 00 i s μs m i s 10 w Po D er is si t io pa 1 TC = 25°C Single Pulse n d it e m Li 0.1 0.1 www.DataSheet4U.com 1 10 100 VDS - Drain to Source Voltage - V 1000 rth(t) - Transient Thermal Resistance - °C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 Rth(ch-A) = 83.3°C/Wi 10 Rth(ch-C) = 1.49°C/Wi 1 Single Pulse 0.1 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18760EJ2V0DS 3 2SK4145 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 250 200 ID - Drain Current - A 1000 100 10 1 0.1 0.01 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V ID - Drain Current - A 150 100 50 0 TA = −55°C 25°C 75°C 150°C VGS = 10 V Pulsed VDS = 10 V Pulsed GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 TA = −55°C 25°C 75°C 150°C 10 4 3.5 3 2.5 2 1.5 1 0.5 0 -75 -25 25 75 125 175 Tch - Channel Temperature - °C VDS = 10 V ID = 1 mA VDS = 10 V Pulsed 1 0.1 1 10 100 www.Da.


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