Silicon Bipolar MMIC Cascadable Amplifier
M-Pulse Microwave
Silicon Bipolar MMIC Cascadable Amplifier
Features
• Cascadable 50Ω Gain Block • High Gain: 32.5 dB Ty...
Description
M-Pulse Microwave
Silicon Bipolar MMIC Cascadable Amplifier
Features
Cascadable 50Ω Gain Block High Gain: 32.5 dB Typical Gain @ 0.1 GHz 18.5 dB Typical Gain @ 1.0 GHz Low Noise Figure: 3.2 dB Typical @ 1.0 Ghz Unconditionally Stable (k>1)
MP4TD0800
Chip Outline Drawing1,2,3,4
RF Input
Description
M-Pulse's MP4TD0800 is a high performance silicon bipolar MMIC chip. The MP4TD0800 is designed for use where a low noise (3.2 dB typical) general purpose 50Ω gain block is required. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications. The MP4TD0800 is fabricated using a 10 GHz f T silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability.
35 30 25 GAIN (dB) 20 15 10 5 0 0.1 1 F R E Q U E N C Y (G H z) 10 Id= 3 6m A
375 µ (14.8 mil)
Ground
Optional RF Output & +7.8 Volt 375 µ (14.8 mil)
TYPICAL POWER GAIN vs FREQUENCY
Notes: (unless otherwise specified) 1. Chip Thickness is 120 µ m; 4.8 mils 2. Bond Pads are 40 µ m; 1.6 mils typical in diameter 3. RF Output Contact & +DC Voltage Is Normally Made On Backside Of Chip At Die Attach 4. Tolerance:µ m .xx = ±.13; mil .x = ±.5
Ordering Information
Model No. MP4TD0800G MP4TD0800W
Package Gel Pack Waffle Pack
www.DataSheet4U.com
Electrical Specifications @ T A = +25°C, Id = 36 mA, Z0 = 50Ω Symbol Parameters Test Conditions Gp Power Gain (S212) f = 0.1 GHz f = 1.0 GHz f = 4.0 GHz SWRin Input SWR f = 0.3 ...
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