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NESG3032M14 Dataheets PDF



Part Number NESG3032M14
Manufacturers California Eastern Labs
Logo California Eastern Labs
Description NPN SILICON GERMANIUM RF TRANSISTOR
Datasheet NESG3032M14 DatasheetNESG3032M14 Datasheet (PDF)

NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz • 4-pin lead-less minimold (M14, 1208 package) ORDERING INFORMATION Part.

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NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz • 4-pin lead-less minimold (M14, 1208 package) ORDERING INFORMATION Part Number NESG3032M14 Order Number NESG3032M14-A Package 4-pin lead-less minimold (M14, 1208 package) NESG3032M14-T3 NESG3032M14-T3-A (Pb-Free) Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage www.DataSheet4U.com Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 12.0 4.3 1.5 35 150 150 −65 to +150 Unit V V V mA mW °C °C Tj Tstg Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10575EJ01V0DS (1st edition) Date Published July 2005 CP(K) © NEC Compound Semiconductor Devices, Ltd. 2005 NESG3032M14 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Insertion Power Gain Noise Figure Associated Gain Reverse Transfer Capacitance Maximum Stable Power Gain ⏐S21e⏐ NF Ga Cre Note 2 Note 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 2 V, IC = 6 mA − − 220 − − 300 100 100 380 nA nA − VCE = 2 V, IC = 15 mA, f = 2.0 GHz VCE = 2 V, IC = 6 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 2 V, IC = 15 mA, f = 2.0 GHz VCE = 3 V, IC (set) = 20 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt VCE = 3 V, IC (set) = 20 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt 15.0 − − − 17.5 − − 17.5 0.60 17.5 0.15 20.5 − 0.85 − 0.25 − − − dB dB dB pF dB MSG 3 Gain 1 dB Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point PO (1 dB) OIP3 12.5 24.0 dBm dBm Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking www.DataSheet4U.com hFE Value FB zN 220 to 380 S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ 2 Data Sheet PU10575EJ01V0DS NESG3032M14 PACKAGE DIMENSIONS 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) (UNIT: mm) 1.0±0.05 0.8+0.07 –0.05 3 2 4 zN 1 0.5±0.05 PIN CONNECTIONS 1. 2. 3. 4. Collector Emitter Base NC (Connected with Pin 2) www.DataSheet4U.com 0.11+0.1 –0.05 0.15±0.05 1.2+0.07 –0.05 0.8 Data Sheet PU10575EJ01V0DS 3 NESG3032M14 When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. • The information in this document is current as of July, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these.


35HT-1A-12Z-xx-x NESG3032M14 MP4T243


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