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D2485

Hitachi Semiconductor

2SD2485

2SD2485 Silicon NPN Epitaxial Application Low frequency power amplifier TO-92MOD. Features • Low saturation voltage V...


Hitachi Semiconductor

D2485

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2SD2485 Silicon NPN Epitaxial Application Low frequency power amplifier TO-92MOD. Features Low saturation voltage VCE(sat) = 0.1 V typ. (at IC = 1 A, IB = 50 mA) Large current capacitance IC = 2 A 1. Emitter 2. Collector 3. Base 3 2 1 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current www.DataSheet4U.com Collector peak current Symbol VCBO VCEO VEBO IC ic(peak)* PC Tj Tstg Ratings 80 80 6 2 3 0.9 150 –55 to +150 Unit V V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— Collector power dissipation Junction temperature Storage temperature Note: * PW ≤ 10 ms, duty cycle ≤20 % ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— 2SD2485 Table 2 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector to base cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO Min 80 Typ — Max — Unit V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA IC = 0 VCB = 65 V, IE = 0 VCE = 65 V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.5 A V IC =1...




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