SKM200GAR123D

Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions 1) Values ... 123 D ... 123 D1 Units V V A A V W °C V 1200 1200 200 / 180 400 / 360 ± 20 1380 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 200 / 130 400 / 360 1450 10 500 FWD 6) 260 / 180 400 / 360 1800 24 200 SEMITRANS® M IGBT Modules SKM 200 GA 123 D*) SKM 200 GB 123 D SKM 200 GB 123 D1 6) SKM 200 GAL 123 D 6) SKM 200 GAR 123 D 6) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C IFSM tp = 10 ms; Tj = 150 °C I2t A A A A2s SEMITRANS 3 Characteristics Symbol V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE Conditions 1) VGE = 0, IC = 4 mA VGE = VCE, IC = 6 mA  Tj = 25 °C VGE = 0  VCE = VCES  Tj = 125 °C VGE = 20 V, VCE = 0  IC = 150 A VGE = 15 V;   IC = 200 A Tj = 25 (125) °C  VCE = 20 V, IC = 150 A per IGBT  VGE = 0  VCE = 25 V  f = 1 MHz min. typ. max. – 6,5 3 – 1 3(3,7) – – 700 13 2 1,2 20 400 200 800 100 – – 2,5 – 1,2 7 – – 2,2 – 1,2 5,5 – – Units V V mA mA µA V V S pF nF nF nF nH ns ns ns ns mWs mWs V V V mΩ A µC V V V mΩ A µC °C/W °C/W °C/W ≥ VCES – 4,5 5,5 – 0,2 – 12 – – – 2,5(3,1) – 2,8(3,6) 95 – – – – – – – – – – – – – – – – – – – – – – – – – – – – 10 1,5 0,8 – 220 100 600 70 24 17 2,0(1,8) 2,25(2,05) – 5 55(80) 8(20) 1,85(1,6) 2,0(1,8) – 3 60(90) 8(...