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UGF8AT Dataheets PDF



Part Number UGF8AT
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Ultrafast Rectifier
Datasheet UGF8AT DatasheetUGF8AT Datasheet (PDF)

UG(F,B)8AT thru UG(F,B)8DT Vishay General Semiconductor Ultrafast Rectifier TO-220AC ITO-220AC FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability 2 UG8xT PIN 1 PIN 2 2 1 UGF8xT PIN 1 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC CASE P.

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UG(F,B)8AT thru UG(F,B)8DT Vishay General Semiconductor Ultrafast Rectifier TO-220AC ITO-220AC FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability 2 UG8xT PIN 1 PIN 2 2 1 UGF8xT PIN 1 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC CASE PIN 2 TO-263AB K 2 1 UGB8xT PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. MECHANICAL DATA Case: TO-220AC, ITO-220AC, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr 8.0 A 50 V to 200 V 150 A 20 ns 0.95 V 150 °C www.DataSheet4U.com VF TJ max. MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC = 100 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range Isolation voltage (ITO-220AC only) from terminals to heatsink t = 1 min SYMBOL VRRM VRMS VDC IF(AV) IFSM TJ, TSTG VAC UG8AT 50 35 50 UG8BT 100 70 100 8.0 150 - 55 to + 150 1500 UG8CT 150 105 150 UG8DT 200 140 200 UNIT V V V A A °C V Document Number: 88765 Revision: 09-Nov-07 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 UG(F,B)8AT thru UG(F,B)8DT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage (1) Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Maximum reverse recovery time Maximum recovered stored charged Typical junction capacitance 8.0 A 20.0 A 5.0 A TEST CONDITIONS SYMBOL VF TJ = 150 °C TJ = 25 °C TJ = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 8.0 A, VR = 30 V, dI/dt = 50 A/µs, Irr = 10 % IRM IF = 8.0 A, VR = 30 V, dI/dt = 50 A/µs 4.0 V, 1 MHz TJ = 25 °C TJ = 100 °C TJ = 25 °C TJ = 100 °C IR trr trr UG8AT UG8BT UG8CT UG8DT UNIT V 1.0 1.2 0.95 10 300 20 30 50 20 45 45 µA ns ns Qrr CJ nC pF THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle SYMBOL RθJC UG8AT 4.0 UGF8AT 5.0 UGB8AT 4.0 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AC ITO-220AC www.DataSheet4U.com TO-263AB TO-263AB TO-220AC ITO-220AC TO-263AB TO-263AB Note: (1) Automotive grade AEC Q101 qualified PREFERRED P/N UG8DT-E3/45 UGF8DT-E3/45 UGB8DT-E3/45 UGB8DT-E3/81 UG8DTHE3/45 (1) UGF8DTHE3/45 (1) UGB8DTHE3/45 (1) UNIT WEIGHT (g) 1.80 1.95 1.33 1.33 1.80 1.95 1.33 1.33 PACKAGE CODE 45 45 45 81 45 45 45 81 BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube 50/tube 50/tube 800/reel DELIVERY MODE Tube Tube Tube Tape reel Tube Tube Tube Tape reel UGB8DTHE3/81 (1) www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88765 Revision: 09-Nov-07 UG(F,B)8AT thru UG(F,B)8DT Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 12 1000 Resistive or Inductive Load 10 Average Forward Rectified Current (A) Instantaneous Reverse Leakage Current (µA) TJ = 125 °C 100 TJ = 100 °C 8 10 6 1 TJ = 25 °C 0.1 4 2 0 0 25 50 75 100 125 150 175 0.01 0 20 40 60 80 100 Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Maximum Forward Current Derating Curve Figure 4. Typical Reverse Charateristics 1000 60 Recovered Store Charge/Reverse Recovery Time (nC/ns) Peak Forward Surge Current (A) TC = 100 °C 8.3 ms Single Half Sine-Wave 50 IF = 4.0 A VR = 30 V dI/dt = 150 A/µs dI/dt = 100 A/µs 20 A/µs 40 50 A/µs 100 A/µs 30 150 A/µs 20 A/µs 10 trr Qrr 0 25 50 75 100 125 150 175 50 A/µs 100 20 10 1 www.DataSheet4U.com 10 100 0 Number of Cycles at 60 Hz Junction Temperature (°C) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Figure 5. Reverse Switching Characteristics 100 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 10 1 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle Junction Capacitance (pF) 1.4 1.6 10 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1 .


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