SPN2302A

SPN2302A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES  20V/4.0A,RDS(ON)=75mΩ@VGS=4.5V  20V/3.4A,RDS(ON)=95mΩ@VGS=2.5V  20V/2.8A,RDS(ON)=135mΩ@VGS=1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23-3L package design APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter PIN CONFIGURATION(SOT-23-3L) PART MARKING 2020/02/12 Ver.3 Page 1 SPN2302A N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN2302AS23RGB SOT-23-3L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2302AS23RGB : Tape Reel ; Pb – Free; Halogen – Free Part Marking 2A ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pu...