Document
SPN3632
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN3632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES 100V/80A,RDS(ON)=8.8mΩ@VGS=10V 100V/30A,RDS(ON)=13mΩ@VGS=6.0V 100V/10A,RDS(ON)=10mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability TO-220-3L package design
APPLICATIONS DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier
PIN CONFIGURATION( TO-220-3L )
PART MARKING
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SPN3632
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G D S
Description Gate Drain Source
ORDERING INFORMATION
Part Number
Package
SPN3632T220TGB
TO-220-3L
※ SPN3632T220TGB: Tube ; Pb – Free; Halogen – Free
Part Marking SPN3632
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
Avalanche Current
Power Dissipation
TA=25℃ TA=70℃
Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.12mH , IAS = 75A , VDD = 80V. )
Operating Junction Temperature
Storage Temperature Range Thermal Resistance-Junction to Ambient
Symbol VDSS VGSS ID
IDM IAS
PD
EAS TJ TSTG RθJA
Typical 110
±20 90 90 240
60 4.5 3.38 335
-55/150 -55/150
62.5
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Unit V V A A A W mJ ℃ ℃
℃/W
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SPN3632
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=100V,VGS=0V IDSS VDS=100V,VGS=0V
TJ = 150 °C
ID(on) VDS≥10V,VGS=10V
RDS(on) gfs
VGS=10V,ID=80A VGS=6.0V,ID=30A VGS=4.5V,ID=10A
VDS=15V,ID=20A
VSD IS=30A,VGS=0V
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=50V,VGS=10V ID=20A
VDS=50VGS=0V f=1MHz
VDD=50V,RL=0.6Ω ID=20A,VGEN=10V RG=1.0Ω
Min. Typ Max. Unit
100
V
1.0
3.0
±100 nA
1 uA
250
70
A
7.5 8.8 8.5 9.8 mΩ 8.2 10.0
62
S
1.5 V
100
35
nC
25
6500
650
pF
190
25
20
nS
30
10
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SPN3632
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN3632
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN3632
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN3632
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN3632
N-Channel Enhancement Mode MOSFET
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