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SPN3632 Dataheets PDF



Part Number SPN3632
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN3632 DatasheetSPN3632 Datasheet (PDF)

SPN3632 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  100V/80A,RDS(ON)=8.8mΩ@VGS=10V  100V/30.

  SPN3632   SPN3632


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SPN3632 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  100V/80A,RDS(ON)=8.8mΩ@VGS=10V  100V/30A,RDS(ON)=13mΩ@VGS=6.0V  100V/10A,RDS(ON)=10mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L package design APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier PIN CONFIGURATION( TO-220-3L ) PART MARKING 2020/05/13 Ver.3 Page 1 SPN3632 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN3632T220TGB TO-220-3L ※ SPN3632T220TGB: Tube ; Pb – Free; Halogen – Free Part Marking SPN3632 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Avalanche Current Power Dissipation TA=25℃ TA=70℃ Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.12mH , IAS = 75A , VDD = 80V. ) Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IAS PD EAS TJ TSTG RθJA Typical 110 ±20 90 90 240 60 4.5 3.38 335 -55/150 -55/150 62.5 2020/05/13 Ver.3 Unit V V A A A W mJ ℃ ℃ ℃/W Page 2 SPN3632 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V VDS=100V,VGS=0V IDSS VDS=100V,VGS=0V TJ = 150 °C ID(on) VDS≥10V,VGS=10V RDS(on) gfs VGS=10V,ID=80A VGS=6.0V,ID=30A VGS=4.5V,ID=10A VDS=15V,ID=20A VSD IS=30A,VGS=0V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=50V,VGS=10V ID=20A VDS=50VGS=0V f=1MHz VDD=50V,RL=0.6Ω ID=20A,VGEN=10V RG=1.0Ω Min. Typ Max. Unit 100 V 1.0 3.0 ±100 nA 1 uA 250 70 A 7.5 8.8 8.5 9.8 mΩ 8.2 10.0 62 S 1.5 V 100 35 nC 25 6500 650 pF 190 25 20 nS 30 10 2020/05/13 Ver.3 Page 3 SPN3632 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/05/13 Ver.3 Page 4 SPN3632 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/05/13 Ver.3 Page 5 SPN3632 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/05/13 Ver.3 Page 6 SPN3632 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/05/13 Ver.3 Page 7 SPN3632 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2020/05/13 Ver.3 Page 8 .


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