SPN4526
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4526 is the N-Channel logic enhancement mode power field e...
SPN4526
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4526 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES 40V/10A,RDS(ON)=25mΩ@VGS=10V 40V/ 8A,RDS(ON)=30mΩ@VGS=4.5V 40V/ 6A,RDS(ON)=36mΩ@VGS=2.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOP–8 package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
PIN CONFIGURATION(SOP–8)
2020/03/23 Ver.2
PART MARKING
Page 1
SPN4526
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN4526S8RGB
SOP-8
※ SPN4526S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operating Junction Temperature
S...