SPN4946
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4946 is the Dual N-Channel logic enhancement mode power fi...
SPN4946
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4946 is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES 60V/12A,RDS(ON)=45mΩ@VGS=10V 60V/ 8A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOP–8 package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
PIN CONFIGURATION(SOP–8)
PART MARKING
2020/03/26 Ver.3
Page 1
SPN4946
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S1 G1 S2 G2 D2 D2 D1 D1
Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1
ORDERING INFORMATION
Part Number
Package
SPN4946S8RGB
SOP-8
※ SPN4946S8RGB: 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter Drain-Source Voltage Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current Avalanche Current
Power Dissipation
Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient
...