SPN7510
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN7510 is the N-Channel logic enhancement mode power field ef...
SPN7510
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN7510 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 100V/30A,RDS(ON)= 16mΩ@VGS= 10V 100V/16A,RDS(ON)= 21mΩ@VGS= 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L package design APPLICATIONS z DC/DC Converter z Load Switch SMPS Secondary Side Synchronous Rectifier z
PIN CONFIGURATION( TO-220-3L )
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PART MARKING
2009/06/15 Ver.1
Page 1
SPN7510
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin 1 2 3
Symbol G D S
Description Gate Drain Source
ORDERING INFORMATION Part Number SPN7510T220TGB Package TO-220-3L Part Marking SPN7510
※ SPN7510T220TGB : Tube ; Pb – Free ; Halogen - Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter
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Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM TA=25℃ TA=70℃ PD EAS TJ TSTG RθJA
Typical 100 ±20
Unit
Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Power Dissipation
V V A A W
mJ
72 45 240 130 3.38
335
Avalanche Energy with Single Pulse ( Tj=25℃, L ...