SPN8878

SPN8878 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS Power Management in Note book Powered System DC/DC Converter Load Switch FEATURES  30V/20A,RDS(ON)=12mΩ@VGS=10V  30V/15A,RDS(ON)=17mΩ@VGS=4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L package design PIN CONFIGURATION TO-252-2L PART MARKING 2020/04/30 Ver.2 Page 1 SPN8878 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN8878T252RGB TO-252-2L ※ SPN8878T252RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking SPN8878 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Symbol VDSS Gate –Source Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=100℃ VGSS ID IDM Continuous Drain Current Power Dissipation TO-252-2L TA=25℃ TO-251 Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient IS PD TJ TSTG RθJA Typical 30 ±2...