SPN8822A 6Common-Drain Dual N-Channel
Enhancement Mode MOSFET
DESCRIPTION The SPN8822A is the Common-Drain Dual N-Chann...
SPN8822A 6Common-Drain Dual N-Channel
Enhancement Mode MOSFET
DESCRIPTION The SPN8822A is the Common-Drain Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES 20V/5.8A,RDS(ON)=30mΩ@VGS=4.5V 20V/5.0A,RDS(ON)=42mΩ@VGS=2.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability TSSOP–8 package design
PIN CONFIGURATION(TSSOP–8)
PART MARKING
2020/03/02 Ver.2
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SPN8822A 6Common-Drain Dual N-Channel
Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol D1 / D2
S1 S1 G1 G2 S2 S2 D1 / D2
ORDERING INFORMATION
Part Number
Package
SPN8822ATS8RGB
TSSOP-8
SPN8822ATS8TGB
TSSOP-8
※ SPN8822ATS8RGB : 13” Tape Reel ; Pb – Free; Halogen - Free ※ SPN8822ATS8TGB : Tube ; Pb – Free; Halogen - Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter Drain-Source Voltage Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
Symbol VDSS VGSS ID IDM
Continuous S...