SPN8822

SPN8822 6Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8822 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  20V/8.0A,RDS(ON)=24mΩ@VGS=4.5V  20V/7.0A,RDS(ON)=32mΩ@VGS=2.5V  20V/3.0A,RDS(ON)=42mΩ@VGS=1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TSSOP–8 package design PIN CONFIGURATION(TSSOP–8) PART MARKING 2020/03/02 Ver.2 Page 1 SPN8822 6Common-Drain Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol D1 / D2 S1 S1 G1 G2 S2 S2 D1 / D2 ORDERING INFORMATION Part Number Package SPN8822TS8RGB TSSOP-8 SPN8822TS8TGB TSSOP-8 ※ SPN8822TS8RGB : 13” Tape Reel ; Pb – Free; Halogen - Free ※ SPN8822TS8TGB : Tube ; Pb – Free; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous...