SPP2305
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP2305 is the P-Channel logic enhancement mode power field e...
SPP2305
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP2305 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES -15V/-3.5A,RDS(ON)=70mΩ@VGS=-4.5V -15V/-3.0A,RDS(ON)=85mΩ@VGS=-2.5V -15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current
capability SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
2020/02/12 Ver.5
Page 1
SPP2305
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G S D
Description Gate Source Drain
ORDERING INFORMATION
Part Number
Package
SPP2305S23RGB
SOT-23-3L
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP2305S23RGB : Tape Reel ; Pb – Free ; Halogen - Free
Part Marking 05
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
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