SPP8803
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP8803 is the Dual P-Channel logic enhancement mode power fie...
SPP8803
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP8803 is the Dual P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES -20V/-7.0A,RDS(ON)= 20mΩ@VGS=-4.5V -20V/-6.0 A,RDS(ON)= 25mΩ@VGS=-2.5V -20V/-5.0 A,RDS(ON)= 35mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSSOP-8P package design APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter
PIN CONFIGURATION(TSSOP – 8P)
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PART MARKING
2008 / 04 /20 Ver.1
Page 1
SPP8803
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin 1 2 3 4 5 6 7 8
ORDERING INFORMATION Part Number SPP8803TS8RG SPP8803TS8TG ※ SPP8803TS8RG : 13” Tape Reel ; Pb – Free ※ SPP8803TS8TG : Tube ; Pb – Free
Symbol D1 S1 S1 G1 G2 S2 S2 D2
Description Drain Source Source Gate Gate Source Source Drain
Package TSSOP- 8P TSSOP- 8P
Part
Marking 8803 8803
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter
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Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS TA=25℃ TA=70℃ PD TJ TSTG RθJA
Typi...