FGA70N30T

FGA70N30T 300V, 70A PDP Trench IGBT December 2007 FGA70N30T 300V, 70A PDP IGBT Features High current capability Low saturation voltage: VCE(sat) =1.5V @ IC = 40A High input impedance Fast switching RoHS complaint tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Application . PDP System C G TO-3P G C E E Absolute Maximum Ratings Symbol VCES VGES Gate-Emitter Voltage @ TC = 25oC @ TC = 25oC @ TC = 100 C o Description Collector-Emitter Voltage Ratings 300 ±30 160 201 90.6 -55 to +150 -55 to +150 300 Units V V A W W oC o o Pulsed Collector Current IC pulse(1)* www.DataSheet4U.com Maximum Power Dissipation PD Maximum Power Dissipation TJ Tstg TL Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds C C Thermal Characteristics Symbol RθJC(IGBT) RθJA Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.2 * Ic_pluse limited by max Tj Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --- Max. 0.62 40 Units o o C/W C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA70N30T Rev. A FGA70N30T 300V, 70A PDP Trench IGBT Package Marking and Ordering Information Device Marking FGA70N30T Device FGA70N30TTU Package TO-3P = 25oC unless otherwise noted Packagi...