FDS8840NZ

FDS8840NZ N-Channel Power Trench® MOSFET April 2009 FDS8840NZ N-Channel PowerTrench® MOSFET 40 V, 18.6 A, 4.5 mΩ Features „ Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.6 A „ Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 14.9 A „ HBM ESD protection level of 6 kV typical(note 3) „ High performance trench technology for extremely low rDS(on) and fast switching „ High power and current handling capability „ Termination is Lead-free and RoHS Compliant General Description The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Applications „ Synchronous Buck for Vcore and Server „ Notebook Battery Pack „ Load Switch D D D D D G S S Pin 1 S D S D S S D G SO-8 www.DataSheet4U.com MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 4) (Note 1a) (Note 1b) Ratings 40 ±20 18.6 63 600 2.5 1.0 -55 to +150 Units V V A mJ W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 25 50 °C/W Package Marking and Ordering Information Device Marking FDS8840NZ Device FDS...