FDP8447L

FDP8447L N-Channel PowerTrench® MOSFET FDP8447L N-Channel PowerTrench® MOSFET 40V, 50A, 8.7mΩ May 2007 tm Features General Description „ Max rDS(on) = 8.7mΩ at VGS = 10V, ID = 14A „ Max rDS(on) = 11.2mΩ at VGS = 4.5V, ID = 11A „ Fast Switching This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. „ RoHS Compliant Applications „ Inverter „ Power Supplies D GD S TO-220 FDP Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Drain-Source Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1) (Note 3) (Note 1) Ratings 40 ±20 50 65 12 100 153 60 2 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 2.1 (Note 1) 62.5 °C/W Device Marking FDP8447L Device FDP8447L Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50units ©2007 Fairchild Semiconductor Corporation 1 FDP8447L Rev.B www.fairchildsemi.com FDP8447L N-Channel PowerTrench® MOSFET ...