FDPF19N40

FDP19N40 / FDPF19N40 N-Channel MOSFET October FDP19N40 / FDPF19N40 N-Channel MOSFET 400V, 19A, 0.24Ω Features RDS(on) =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A Low Gate Charge ( Typ. 32nC) Low Crss ( Typ. 20pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability RoHS Compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. D G G DS TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS www.DataSheet4U.com V GSS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FDP19N40 FDPF19N40 400 ±30 19* 11.4* 76* 542 19 21.5 15 Units V V A A mJ A mJ V/ns ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL 19 11.4 76 215 1.65 -55 to +150 300 40 0.3 W W/oC o o Operating and Storage Temperature Range ...