N-Channel PowerTrench MOSFET
FDMS7650 N-Channel PowerTrench® MOSFET
February 2016
FDMS7650
N-Channel PowerTrench® MOSFET
30 V, 267 A, 0.99 mΩ
Feat...
Description
FDMS7650 N-Channel PowerTrench® MOSFET
February 2016
FDMS7650
N-Channel PowerTrench® MOSFET
30 V, 267 A, 0.99 mΩ
Features
General Description
Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A
Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A
Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).
MSL1 Robust Package Design 100% UIL Tested RoHS Compliant
Applications
OringFET Synchronous Rectifier
D D D D
D5
4G
G S S S
Pin 1
Top Bottom Power 56
D6 D7 D8
3S 2S 1S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Continuous -Pulsed
TC = 25 °C TC = 100 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4) (Note 5) (Note 5) (Note 1a) (Note 6) (Note 3)
(Note 1a)
Ratings 30 ±20 267 169 36
1210 544 104 2.5 -55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2 ...
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