Document
FDMC8296 N-Channel Power Trench® MOSFET
FDMC8296
N-Channel Power Trench® MOSFET
30V, 18A, 8.0m:
June 2014
Features
General Description
Max rDS(on) = 8.0m: at VGS = 10V, ID = 12A Max rDS(on) = 13.0m: at VGS = 4.5V, ID = 10A High performance trench technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Application
DC - DC Buck Converter
Notebook battery power management
Load switch in Notebook
Top
Bottom
S SG S MLP 3.3x3.3
DD D D
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous
TC = 25°C TA = 25°C
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation Power Dissipation
TC = 25°C TA = 25°C
Operating and Storage Junction Temperature Range
(Note 1a) (Note 3)
(Note 1a)
Ratings 30 ±20 18
12 52 72 27 2.3 -55 to +150
Units V V A
mJ W °C
Thermal Characteristics
RTJC RTJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking FDMC8296
Device FDMC8296
Package MLP 3.3X3.3
4.6
(Note 1a)
53
°C/W
Reel Size 13 ’’
Tape Width 12 mm
Quantity 3000 units
©2010 Fairchild Semiconductor Corporation
1
FDMC8296 Rev.C3
www.fairchildsemi.com
FDMC8296 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS 'TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250PA, VGS = 0V
ID = 250PA, referenced to 25°C
VDS = 24V,
VGS = 0V,
TJ = 125°C
VGS = ±20V, VDS = 0V
30
V
17
mV/°C
1 PA
250 ±100 nA
On Characteristics
VGS(th)
'VGS(th) 'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250PA
1.0
ID = 250PA, referenced to 25°C
VGS = 10V, ID = 12A VGS = 4.5V, ID = 10A VGS = 10V, ID = 12A, VDD = 5V, ID = 12A
TJ = 125°C
1.9
3.0
V
-6
mV/°C
6.5
8.0
9.5
13.0 m:
9.0
12.8
44
S
Dynamic Characteristics
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VDS = 15V, VGS = 0V, f = 1MHz
f = 1MHz
1038 1385 pF
513
685
pF
87
135
pF
0.9
:
Switching Characteristics
td(on) tr td(off) tf
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Qg(TOT)
Total Gate Charge
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Char.