Document
FDD6782A N-Channel Power Trench® MOSFET
January 2009
FDD6782A
N-Channel PowerTrench® MOSFET
25 V, 10.5 mΩ Features
Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 14.9 A Max rDS(on) = 24.0 mΩ at VGS = 4.5 V, ID = 11.0 A 100% UIL test RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture
D
D G S
G
D-PAK TO -252 (TO-252)
S
www.DataSheet4U.com Symbol VDS
VGS
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 25 ±20 20 42 20 100 12 31 3.7 -55 to +175 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 4.8 40 °C/W
Package Marking and Ordering Information
Device Marking FDD6782A Device FDD6782A Package D-PAK (TO-252) Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units
©2009 Fairchild Semiconductor Corporation FDD6782A Rev.C
1
www.fairchildsemi.com
FDD6782A N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 20 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 25 16 1 ±100 V mV/°C µA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 µA ID = 250 µA, referenced to 25 °C VGS = 10 V, ID = 14.9 A VGS = 4.5 V, ID = 11.0 A VGS = 10 V, ID = 14.9 A, TJ = 150 °C VDS = 5 V, ID = 14.9 A 1.0 1.8 -6 8.3 17.8 12.7 60 10.5 24.0 16.1 S mΩ 3.0 V mV/°C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 13 V, VGS = 0 V, f = 1MHz f = 1MHz 800 162 151 1.0 1065 220 230 pF pF pF Ω
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 13 V, ID = 14.9 A VDD = 13 V, ID = 14.9 A, VGS = 10 V, RGEN = 6 Ω 7 3 15 2 15 8 2.5 3.2 14 10 27 4 27 16 ns ns ns ns nC nC nC nC
Drain-Source www.DataSheet4U.com
VSD trr Qrr
Diode Characteristics
VGS = 0 V, IS = 3.1 A VGS = 0 V, IS = 14.9 A (Note 2) (Note 2) 0.8 0.9 14 4 1.2 1.3 26 10 V ns nC
Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
IF = 14.9 A, di/dt = 100 A/µs
Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper
b) 96 °C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: EAS of 12 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 5 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 12 A.
©2009 Fairchild Semiconductor Corporation FDD6782A Rev.C
2
www.fairchildsemi.com
FDD6782A N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
100
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V
4
PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 6 V VGS = 3.5 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 4 V VGS = 4.5 V
80
ID, DRAIN CURRENT (A)
VGS = 8 V
3
60
VGS = 4.5 V
2
VGS = 8 V
VGS = 6 V
40
VGS = 4 V
20
VGS = 3.5 V
1
VGS = 10 V
0 0
0 0 20 40 60 80 100
ID, DRAIN CURRENT (A)
0.5
1.0
1.5
2.0
2.5
3.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
35
SOURCE ON-RESISTANCE (mΩ)
1.8
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.6 1.4 1.2 1.0 0.8
ID = 14.9 A VGS = 10 V
30 25 20
PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX
ID = 14.9 A
rDS(on), DRAIN TO
TJ = 150 oC
15 10
TJ = 25 oC
0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC)
5 2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized .