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FDD6782A Dataheets PDF



Part Number FDD6782A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDD6782A DatasheetFDD6782A Datasheet (PDF)

FDD6782A N-Channel Power Trench® MOSFET January 2009 FDD6782A N-Channel PowerTrench® MOSFET 25 V, 10.5 mΩ Features „ Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 14.9 A „ Max rDS(on) = 24.0 mΩ at VGS = 4.5 V, ID = 11.0 A „ 100% UIL test „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(.

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FDD6782A N-Channel Power Trench® MOSFET January 2009 FDD6782A N-Channel PowerTrench® MOSFET 25 V, 10.5 mΩ Features „ Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 14.9 A „ Max rDS(on) = 24.0 mΩ at VGS = 4.5 V, ID = 11.0 A „ 100% UIL test „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Applications „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D D G S G D-PAK TO -252 (TO-252) S www.DataSheet4U.com Symbol VDS VGS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 25 ±20 20 42 20 100 12 31 3.7 -55 to +175 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 4.8 40 °C/W Package Marking and Ordering Information Device Marking FDD6782A Device FDD6782A Package D-PAK (TO-252) Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2009 Fairchild Semiconductor Corporation FDD6782A Rev.C 1 www.fairchildsemi.com FDD6782A N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 20 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 25 16 1 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 µA ID = 250 µA, referenced to 25 °C VGS = 10 V, ID = 14.9 A VGS = 4.5 V, ID = 11.0 A VGS = 10 V, ID = 14.9 A, TJ = 150 °C VDS = 5 V, ID = 14.9 A 1.0 1.8 -6 8.3 17.8 12.7 60 10.5 24.0 16.1 S mΩ 3.0 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 13 V, VGS = 0 V, f = 1MHz f = 1MHz 800 162 151 1.0 1065 220 230 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 13 V, ID = 14.9 A VDD = 13 V, ID = 14.9 A, VGS = 10 V, RGEN = 6 Ω 7 3 15 2 15 8 2.5 3.2 14 10 27 4 27 16 ns ns ns ns nC nC nC nC Drain-Source www.DataSheet4U.com VSD trr Qrr Diode Characteristics VGS = 0 V, IS = 3.1 A VGS = 0 V, IS = 14.9 A (Note 2) (Note 2) 0.8 0.9 14 4 1.2 1.3 26 10 V ns nC Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IF = 14.9 A, di/dt = 100 A/µs Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 96 °C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: EAS of 12 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 5 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 12 A. ©2009 Fairchild Semiconductor Corporation FDD6782A Rev.C 2 www.fairchildsemi.com FDD6782A N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 100 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 4 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 6 V VGS = 3.5 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 4 V VGS = 4.5 V 80 ID, DRAIN CURRENT (A) VGS = 8 V 3 60 VGS = 4.5 V 2 VGS = 8 V VGS = 6 V 40 VGS = 4 V 20 VGS = 3.5 V 1 VGS = 10 V 0 0 0 0 20 40 60 80 100 ID, DRAIN CURRENT (A) 0.5 1.0 1.5 2.0 2.5 3.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 35 SOURCE ON-RESISTANCE (mΩ) 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 ID = 14.9 A VGS = 10 V 30 25 20 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX ID = 14.9 A rDS(on), DRAIN TO TJ = 150 oC 15 10 TJ = 25 oC 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) 5 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized .


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