FDD5N53 / FDU5N53 N-Channel MOSFET
January 2009
FDD5N53/FDU5N53
N-Channel MOSFET
530V, 4A, 1.5Ω Features
• RDS(on) = 1...
FDD5N53 / FDU5N53 N-Channel MOSFET
January 2009
FDD5N53/FDU5N53
N-Channel MOSFET
530V, 4A, 1.5Ω Features
RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A Low gate charge ( Typ. 11nC) Low Crss ( Typ. 5pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.
D
G S
D G
D-PAK FDD Series
G
D S
I-PAK FDU Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS www.DataSheet4U.com V
GSS
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3)
FDD5N53/FDU5N53 530 ±30 4 2.4 16 256 4 4 4.5 40 0.3 -55 to +150 300
Units V V A A mJ A mJ V/ns W W/oC
o o
ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Pur...