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FCA47N60F

Fairchild Semiconductor

600V N-Channel MOSFET

FCA47N60F 600V N-Channel MOSFET, FRFET SuperFET FCA47N60F 600V N-Channel MOSFET, FRFET Features • 650V @TJ = 150°C • Ty...


Fairchild Semiconductor

FCA47N60F

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Description
FCA47N60F 600V N-Channel MOSFET, FRFET SuperFET FCA47N60F 600V N-Channel MOSFET, FRFET Features 650V @TJ = 150°C Typ. RDS(on) = 0.062Ω Fast Recovery Type ( trr = 240ns) Ultra Low Gate Charge (typ. Qg = 210nC) Low Effective Output Capacitance (typ. Cosseff. = 420pF) 100% avalanche tested January 2009 TM Description SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D G TO-3PN G DS FCA Series S Absolute Maximum Ratings Symbol VDSS ID Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FCA47N60F 600 47 29.7 141 ± 30 1800 47 41.7 50 417 3.33 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C www.DataSheet4U.com IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Operating and Storage Temperature Range M...




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